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2TB Samsung 990 Pro M.2 PCI Express 4.0 Internal Solid State Drive by Samsung


2TB Samsung 990 Pro M.2 PCI Express 4.0 Internal Solid State Drive Image

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Key Features

  • 2TB Samsung 990 PRO Internal Solid State Drive
  • Read speed: 7450MB/s
  • Write speed: 6900MB/s
  • PCI Express 4.0 interface
  • M.2 form factor
See full specifications
See product description


Details

Reach max performance of PCIe® 4.0. Experience longer-lasting, opponent-blasting speed. The in-house controller's smart heat control delivers supreme power efficiency while maintaining ferocious speed and performance, to always keep you at the top of your game.

PCIe 4.0 speed maximized

Huge speed boost. 40% and 55% faster random read/write speeds than 980 PRO - up to 1,400K/1,550K IOPS, while sequential read/write speeds up to 7,450/6,900 MB/s reach near max performance of PCIe® 4.0. Fly high in gaming, video and 3D editing, data analysis, and more.

Breakthrough power efficiency

More power-efficient performance. Higher performance usually consumes more power. 990 PRO uses less power with up to 50% improved performance per Watt over 980 PRO. This low-power design makes max PCIe® 4.0 performance possible with optimal power efficiency.

Smart thermal solution

Speed beyond the heat. The nickel-coated controller and cutting-edge thermal control algorithm manage heat for unwavering performance. The heat spreader label controls NAND chip heat, while Dynamic Thermal Guard keeps temperatures optimal.

The champion maker

The best gameplay experience. A more than 55% improvement in random performance enables faster loads for ultimate gaming realism on PS5 and DirectStorage PC games.

Samsung Magician software

Unlock the full power of 990 PRO. Samsung Magician software's user-friendly suite of optimisation tools always gets you the best SSD performance. Protect data, get updates, and monitor drive health. Your personal SSD toolkit.

World's No. 1 Flash Memory

Experience superior performance and reliability you only get from the world's No.1 flash memory brand since 2003. All components and firmware are produced in-house, including Samsung's world-renowned DRAM and NAND, for integrated start-to-finish quality you can trust.






Specifications
CAPACITY 2TB
INTERFACE TYPE PCI Express 4.0
FORM FACTOR M.2
DATA TRANSFER RATES Read speed: 7450MB/s
Write speed: 6900MB/s
RANDOM READ (4K) IOPS 1400000 IOPS
RANDOM WRITE (4K) IOPS 1550000 IOPS
FLASH STORAGE DETAILS V-NAND MLC
OPERATING TEMPERATURE 32 - 158 °F
MTBF 1500000 h
TRIM SUPPORT TRIM support
SPECIAL FEATURES 256-bit AES
PACKAGING Retail packaging
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